Quick-start high-voltage boost

ABSTRACT

In one implementation, a voltage boost assembly including a boost converter having a capacitive element arranged at an output, and an inductive element connectable to an electrical supply. The voltage boost assembly also includes a sensor assembly provided to generate a quick-start enable signal in response to detecting that an electrical condition relative to an electrical output of the boost converter has breached a first threshold. The voltage boost assembly further includes a quick-start module responsive to the quick-start enable signal, and configured to drive the boost converter at a relatively high duty-cycle and so that the boost converter delivers an output current that satisfies a second threshold in order to charge the capacitive element arranged at the output.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional of U.S. application Ser. No.15/042,330, filed Feb. 12, 2016, entitled QUICK-START HIGH-VOLTAGEBOOST, which claims priority to U.S. Provisional Application No.62/116,415 filed Feb. 14, 2015, entitled QUICK-START HIGH-VOLTAGE BOOST,the disclosure of which is hereby expressly incorporated by referenceherein in its entirety.

BACKGROUND

Field

The present disclosure relates to power amplifiers in radio-frequency(RF) applications.

Description of the Related Art

Power amplifiers (PAs) are widely used in various communication networksto set the transmission power level of an information-bearing signaltransmitted by one device to another device. For example, poweramplifiers are used to set the pulse energy emitted by pulsed lasers inoptical communication networks. Power amplifiers are also used in theradio frequency (RF) front-end components of wireless carrier networkdevices—such as base stations, repeaters, and mobile client devices(e.g. mobile phones, smartphones, tablet computers, etc.)—to set thepower level of a wireless signal transmitted through an antenna. PAs arealso used in local area networks of homes and offices to support bothwired and wireless connectivity of servers, computers, laptops, andperipheral devices such as photocopiers and printers.

In some implementations, PAs use a boost converter for DC-to-DC powerconversion when the PAs output voltage should be greater than its inputvoltage. Typically, a boost converter with a compensated error-amplifierhas an intrinsic soft-start feature. With the capacitor at theerror-amplifier output slowly being charged up, the duty cycle of theboost is slowly increased, leading to a slow increase of the boostoutput voltage. In some implementations, in order to use a boostconverter to power a high-voltage PA, the boost converter is specifiedto ramp up at a rate of 570 mV/μs in order to avoid any signaldistortion at the output of the PA. The fast ramp-rate of the boostoutput voltage not only limits the value of the output capacitor, butalso posts a challenge on circuit design and architecture to workagainst the slow soft-start nature of the error amplifier.

SUMMARY

In accordance with a number of implementations, the present disclosurerelates to a voltage boost assembly including a boost converter having acapacitive element arranged at an output, and an inductive elementconnectable to an electrical supply. The voltage boost assembly alsoincludes a sensor assembly provided to generate a quick-start enablesignal in response to detecting that an electrical condition relative toan electrical output of the boost converter has breached a firstthreshold. The voltage boost assembly further includes a quick-startmodule responsive to the quick-start enable signal, and configured todrive the boost converter at a relatively high duty-cycle and so thatthe boost converter delivers an output current that satisfies a secondthreshold in order to charge the capacitive element arranged at theoutput.

In some implementations, the inductive element is provided to establishan output current level.

In some implementations, detecting that an electrical condition relativeto an electrical output of the boost converter has breached the firstthreshold includes detecting that a reference voltage indicates demandfor an electrical output (e.g., an output voltage) that is at least 10%higher than the current electrical output of the boost converter.

In some implementations, detecting that an electrical condition relativeto an electrical output of the boost converter has breached the firstthreshold includes detecting that a reference voltage indicates demandfor an electrical output (e.g., an output voltage) that is at least 20%higher than the current electrical output of the boost converter.

In some implementations, the quick-start module includes a chargingcircuit provided to charge the capacitive element so that an electricaloutput (e.g., an output voltage) of an associated error amplifiersatisfies a third threshold in response to the quick-start enablesignal. In some implementations, the third threshold is characterized inrelation to a high voltage level that can be sustained at the output ofthe error amplifier.

In some implementations, the quick-start module includes a saturationlimiting circuit provided to limit current through the inductive elementto establish the output current in response to the quick-start enablesignal. In some implementations, the current through the inductiveelement is limited to a level that is characterized by a saturationcondition of the inductive element.

In some implementations, the quick-start module includes a ripplecontrol module provided to reduce current ripple in the output currentlevel by adjustment of a switching frequency in response to thequick-start enable signal. In some implementations, the ripple controlmodule includes an oscillator that provides a switching frequency thatis increased in response to the quick-start enable signal.

In some implementations, the second threshold is characterized by acurrent level available to charge the capacitive element.

In some implementations, the sensor assembly is configured to turn offthe quick-start enable signal in response to determining that theelectrical output of the boost converter has satisfied a fourththreshold. In some implementations, the fourth threshold isapproximately 95% of a set-point output level.

In some implementations, the present disclosure relates to a module thatincludes a packaging substrate configured to receive a plurality ofcomponents. The module also includes a power amplifier. The modulefurther includes a voltage boost assembly, including a boost converterconfigured for a power amplifier included on at least a portion of thesubstrate, the boost converter having a capacitive element arranged atthe output, and an inductive element connectable to an electricalsupply. The voltage boost assembly also includes a sensor assemblyprovided to generate a quick-start enable signal in response todetecting that an electrical condition relative to an electrical outputof the boost converter has breached a first threshold. The voltage boostassembly further includes a quick-start module responsive to thequick-start enable signal, and configured to drive the boost converterat a relatively high duty-cycle and so that the boost converter deliversan output current that satisfies a second threshold in order to chargethe capacitive element arranged at the output.

In some implementations, the quick-start module includes a chargingcircuit provided to charge the capacitive element so that the output ofan associated error amplifier satisfies a third threshold in response tothe quick-start enable signal.

In some implementations, the quick-start module includes a saturationlimiting circuit provided to limit current through the inductive elementcoupled to establish the output current level in response to thequick-start enable signal.

In some implementations, the quick-start module includes a ripplecontrol module provided to reduce current ripple in the output currentlevel by adjustment of a switching frequency in response to thequick-start enable signal.

In some implementations, the quick-start module is configured to turnoff the quick-start enable signal in response to determining that theelectrical output of the boost converter has satisfied a thirdthreshold.

In some implementations, the module is at least one of a power amplifiermodule (PAM) or a front-end module (FEM). In accordance with someimplementations, the voltage boost assembly of the module includes thefunctions and/or features of any of the voltage boost assembliesdescribed herein.

According to some teachings, the present disclosure relates to aradio-frequency (RF) device that includes a transceiver generate to anRF signal. The RF device also includes a front-end module (FEM) incommunication with the transceiver, the FEM including a packagingsubstrate configured to receive a plurality of components, the FEMfurther including a voltage boost assembly on the packaging substrate,the voltage boost assembly including a boost converter having acapacitive element arranged at the output, and an inductive elementconnectable to an electrical supply a sensor assembly provided togenerate, the voltage boost assembly also including a quick-start enablesignal in response to detecting that an electrical condition relative toan electrical output of the boost converter has breached a firstthreshold, and the voltage boost assembly further including aquick-start module responsive to the quick-start enable signal, andconfigured to drive the boost converter at a relatively high duty-cycleand so that the boost converter delivers an output current thatsatisfies a second threshold in order to charge the capacitive elementarranged at the output. The RF device further includes an antenna incommunication with the FEM, the antenna configured to transmit theamplified RF signal.

In some implementations, the RF device includes a wireless device. Insome implementations, the wireless device includes at least one of abase station, a repeater, a cellular phone, a smartphone, a computer, alaptop, a tablet computer, and a peripheral device. In accordance withsome implementations, the voltage boost assembly of the FEM moduleincludes the functions and/or features of any of voltage boostassemblies described herein.

According to some teaching, the present disclosure relates to a methodof ramping up the output of a boost converter. The method includessensing that an electrical condition relative to an electrical output ofthe boost converter has breached a first threshold. The method furtheralso generating a quick-start enable signal in response to sensing thebreach of the first threshold. The method further includes driving aboost converter to deliver an output current that satisfies a secondthreshold in order to charge a capacitive element arranged at the outputof the boost converter by charging the capacitive element so that theoutput of an associated error amplifier satisfies a third threshold,limiting the current through an inductive element coupled to a supply,and increasing a switching frequency in order to reduce ripple.

For purposes of summarizing the disclosure, certain aspects, advantagesand novel features of the inventions have been described herein. It isto be understood that not necessarily all such advantages may beachieved in accordance with any particular embodiment of the invention.Thus, the invention may be embodied or carried out in a manner thatachieves or optimizes one advantage or group of advantages as taughtherein without necessarily achieving other advantages as may be taughtor suggested herein.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the present disclosure can be understood in greater detail, amore particular description may be had by reference to the features ofvarious implementations, some of which are illustrated in the appendeddrawings. The appended drawings, however, merely illustrate the morepertinent features of the present disclosure and are therefore not to beconsidered limiting, for the description may admit to other effectivefeatures.

FIG. 1 is a block diagram of a voltage boost assembly according to someimplementations.

FIG. 2 is a schematic diagram of the voltage boost assembly in FIG. 1according to some implementations.

FIG. 3 is a schematic diagram of a portion of the voltage boost assemblyin FIG. 1 according to some implementations.

FIG. 4 shows example performance plots of the voltage boost assembly inFIG. 1 according to some implementations.

FIG. 5 is a flowchart representation of a method of operating thevoltage boost assembly in FIG. 1 according to some implementations.

FIG. 6A-6C are block diagrams of different integrated circuit (IC)implementations of the voltage boost assembly in FIG. 1 according tosome implementations.

FIG. 7 is a block diagram of an example module according to someimplementations.

FIG. 8 is a block diagram of an example radio frequency (RF) deviceaccording to some implementations.

In accordance with common practice the various features illustrated inthe drawings may not be drawn to scale. Accordingly, the dimensions ofthe various features may be arbitrarily expanded or reduced for clarity.In addition, some of the drawings may not depict all of the componentsof a given system, method or device. Finally, like reference numeralsmay be used to denote like features throughout the specification andfigures.

DETAILED DESCRIPTION OF SOME IMPLEMENTATIONS

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

As discussed above, in order to use a boost converter to power ahigh-voltage PA, a boost converter is specified to ramp up at a rate of570 mV/μs in order to avoid any signal distortion at the output of thePA. In order to ramp up the boost output voltage quickly, for example, a1 μF capacitor is used as the output capacitor. According to someimplementations, when the reference voltage V_(REF) from the controllerinterface (e.g., MIPI) requests that V_(OUT) be higher than V_(IN), and20% higher than the current output voltage value, the boost converteractivates a quick-start module.

In some implementations, the quick-start circuit module includes atleast one of a charging circuit, a saturation limiting circuit, or aripple control module. In some implementations, the quick-start circuitmodule includes a charging circuit with a current source that is turnedon to force the output voltage of the error amplifier satisfy apredefined value (e.g., 1.1 V or 1.2 V). In other words, the chargingcircuit requests the boost converter to run at maximum duty-cycle. Insome implementations, the quick-start circuit module includes asaturation limiting circuit which sets the current-limit of the boostconverter to a predetermined level (e.g., 2.5 A) to prevent an inductiveelement of the boost converter from being saturated. In other words, thesaturation limiting circuit allows enough current into the output. Insome implementations, the quick-start circuit module includes a ripplecontrol module which increases the switching frequency of the boostconverter above a predetermined switching frequency (e.g., from 2 MHz to2.5 MHz) to achieve lower ripple through the inductive element.

In some implementations, when the output voltage of the boost converteris sensed to reach 95% of its set-point, the quick-start module isturned off. The quick-start module allows the boost to be operated athigh duty-cycle, pumping a maximum amount of current to charge thecapacitor at the boost output.

FIG. 1 is a block diagram of a voltage boost assembly 100 according tosome implementations. While pertinent features are shown, those ofordinary skill in the art will appreciate from the present disclosurethat various other features have not been illustrated for the sake ofbrevity and so as not to obscure more pertinent aspects of the exampleimplementations disclosed herein. To that end, in some implementations,the voltage boost assembly 100 includes a quick-start assembly 115 and aboost converter 130. According to some implementations, the quick-startassembly 115 includes a sensor assembly 110 and a quick-start module120.

In some implementations, the sensor assembly 110 is configured toprovide an enable signal to the quick-start module 120 when one or morepredetermined quick-start enable conditions are satisfied. In oneexample, the quick-start enable conditions are satisfied when V_(IN)102<V_(REF) 104 and 0.8*V_(REF) 104>V_(OUT) 106. In someimplementations, the sensor assembly 110 is configured to provide adisable signal to the quick-start module 120 when one or morepredetermined quick-start disable conditions are satisfied. In oneexample, the quick-start disable conditions are satisfied when0.95*V_(REF) 104<V_(OUT) 106 or V_(IN) 102>V_(REF) 104.

In some implementations, the quick-start module 120 includes a chargingcircuit 122, a saturation limiting circuit 124, and a ripple controlmodule 126. In some implementations, the boost converter 130 includes acapacitive element 132, an inductive element 134, and an error amplifier136. In some implementations, the inductive element 134 is provided toestablish an output current level.

According to some implementations, the charging circuit 122 isconfigured to force the output of the error amplifier 136 to satisfy apredefined value (e.g., 1.1 V or 1.2 V). For example, in someimplementations, this forces the error amplifier 136 to run at a dutycycle that satisfies a predefined threshold (e.g., 100% or maximum dutycycle). According to some implementations, the saturation limitingcircuit 124 is configured to set a limit of the current flowing throughthe inductive element 134 to a predetermined output level (e.g., 2.5 A).For example, in some implementations, this prevents saturation of theinductive element 134. According to some implementations, the ripplecontrol module 126 is configured to increase the switching frequency ofan oscillator 128 above a predetermined switching frequency (e.g., from2 MHz to 2.5 MHz). For example, in some implementations, this reducesripple in the current flowing through the inductive element 134.

FIG. 2 is a schematic diagram of the voltage boost assembly 100 in FIG.1 according to some implementations. While pertinent features are shown,those of ordinary skill in the art will appreciate from the presentdisclosure that various other features have not been illustrated for thesake of brevity and so as not to obscure more pertinent aspects of theexample implementations disclosed herein. Elements common to FIGS. 1-2include common reference numbers, and only the differences between FIGS.1-2 are described herein for the sake of brevity. To that end, in someimplementations, the voltage boost assembly 100 includes resistiveelements 246 and 248, V_(OUT) precharge 204 (e.g., the output voltageprior to the capacitive element 132), and V_(OUT) 106 (e.g., the outputvoltage after the capacitive element 132). In some implementations, thevoltage boost assembly 100 includes a boost control 202 associated witha p-channel field-effect transistor (PFET) (e.g., with R_(ds)=0.27 Ω),which acts as a switch to enable and disable the voltage boost assembly100. According to some implementations, the value of the inductiveelement 134 is, for example, 1.5 μH, and the value of the capacitiveelement 132 is, for example, 1 μF.

As shown in FIG. 2, in some implementations, the quick-start assembly115 is coupled with the output of error amplifier 136. For example, asdiscussed above with reference to FIG. 1, the quick-start assembly 115or a component thereof (e.g., the charging circuit 122 in FIG. 1) isconfigured to force the output of the error amplifier 136 to satisfy apredefined value (e.g., 1.1 V or 1.2 V).

As shown in FIG. 2, in some implementations, the quick-start assembly115 provides an input to current limit comparator 224. For example, asdiscussed above with reference to FIG. 1, the quick-start assembly 115or a component thereof (e.g., the saturation limiting circuit 124 inFIG. 1) is configured to set a limit of the current flowing through theinductive element 134 to a predetermined output level (e.g., 2.5 A).

As shown in FIG. 2, in some implementations, the quick-start assembly115 provides an input to summation element 236 to compensate for theoscillator slope. For example, as discussed above with reference to FIG.1, the quick-start assembly 115 or a component thereof (e.g., the ripplecontrol module 126 in FIG. 1) is configured to increase the switchingfrequency above a predetermined switching frequency (e.g., from 2 MHz to2.5 MHz).

As shown in FIG. 2, in some implementations, the output of the erroramplifier 136 provides an input to pulse-width modulation (PWM)comparator 222. The output of the error amplifier 136 is also coupledwith a shunt resistance element 242 (e.g., 80 kΩ) and a shuntcapacitance element 244 (e.g., 100 pF), which are connected in series toground. The output of the PWM comparator 222 provides an input to ORgate 226, and the output of the current limit comparator 224 providesanother input to the OR gate 226.

As shown in FIG. 2, in some implementations, the output of the OR gate226 provides an input to SR latch 228 (e.g., the R input) along with aclock (CLK) signal (e.g., the S input). The output of the SR latch 228(e.g., the Q output) provides an input to a driver amplifier 230. Theoutput of the driver amplifier 230 is coupled with the gate of ann-channel field-effect transistor (NFET) (e.g., with R_(ds)=0.15Ω) 230.The source of the NFET 230 is coupled with the output of the inductiveelement 134, and the drain of the NFET 230 is coupled with ground.

As shown in FIG. 2, in some implementations, the output of the inductiveelement 134 provides an input to differential amplifier 232. The sourceof NFET 234 provides another input to the differential amplifier 232. Asshown in FIG. 2, in some implementations, the gate of NFET 234 iscoupled with V_(OUT) 106, and the drain of NFET 234 is coupled withground. The output of the differential amplifier 232 provides an inputto the current limit comparator 224 and the summation element 236.

FIG. 3 is a schematic diagram of a portion of the voltage boost assembly100 in FIG. 1 according to some implementations. While pertinentfeatures are shown, those of ordinary skill in the art will appreciatefrom the present disclosure that various other features have not beenillustrated for the sake of brevity and so as not to obscure morepertinent aspects of the example implementations disclosed herein.Elements common to FIGS. 1-3 include common reference numbers, and onlythe differences between FIGS. 1-3 are described herein for the sake ofbrevity. To that end, in some implementations, the quick-start assembly115: includes comparators 302, 304, and 306; differential amplifiers 308and 310; SR latch 314; AND gate 316; NFET 318; and current source 320.

As shown in FIG. 3, in some implementations, the comparators 304 and 306provide inputs to the SR latch 314 (e.g., the S and R inputs,respectively). As shown in FIG. 3, in some implementations, thecomparator 302 and the SR latch 314 (e.g., the Q output) provide inputsto the AND gate 316. When V_(IN) 102<V_(REF) 104 and 0.8*V_(REF)104>V_(OUT) 106, the output of the AND gate 316 is logic high (e.g., 1)and the voltage boost assembly 100 operates under quick-startparameters. Under quick-start parameters, (A) the current flowingthrough the inductive element 134 is set to a predetermined output level(e.g., 2.5 A), (B) the switching frequency is increased above apredetermined switching frequency (e.g., from 2 MHz to 2.5 MHz), and (C)the current source 320 supplies a predefined current (e.g., 10 μA) sothat the output of the error amplifier 136 to satisfy a predefined value(e.g., 1.1 V or 1.2 V). When V_(IN) 102>V_(REF) 104 or 0.95*V_(REF)104<V_(OUT) 106, the output of the AND gate 316 is logic low (e.g., 0)and the voltage boost assembly 100 operates under regular parameters.

As shown in FIG. 3, in some implementations, V_(REF) 104 and V_(OUT) 106provide inputs to the differential amplifier 308. The output of thedifferential amplifier 308 and V_(bg) 312 provide inputs to thedifferential amplifier 310. The output of the differential amplifier 310is coupled to the gate of NFET 318. In other words, in one example, theNFET 318 and differential amplifiers 308 and 310 clamp the output of theerror amplifier 136 at 1.2 V.

FIG. 4 shows example performance plots of the voltage boost assembly 100in FIG. 1 according to some implementations. While pertinent featuresare shown, those of ordinary skill in the art will appreciate from thepresent disclosure that various other features have not been illustratedfor the sake of brevity and so as not to obscure more pertinent aspectsof the example implementations disclosed herein. To that end, in someimplementations, example performance plot 410 shows V_(OUT) 106 overtime. For example, as shown in example performance plot 410, V_(OUT) 106increases from approximately 3.8 V to 9.5 V in approximately 10 μs.

According to some implementations, example performance plot 420 showsV_(REF) 104 versus time. For example, as shown in example performanceplot 420, V_(REF) 104 increases from approximately 0.5 V to 2.0 V.

According to some implementations, example performance plot 430 showsthe output voltage of the error amplifier 136 versus time. For example,as shown in example performance plot 430, the output voltage of theerror amplifier 136 is clamped at 1.2 V during the quick-start periodbetween 5 and 10 μs.

According to some implementations, example performance plot 440 showsthe current flowing through the inductive element 134 versus time. Forexample, as shown in example performance plot 440, the current flowingthrough the inductive element 134 is limited to 2.5 A during thequick-start period between 5 and 10 μs.

FIG. 5 is a flowchart representation of a method 500 of operating thevoltage boost assembly 100 in FIG. 1 in accordance with someimplementations. In some implementations, the method 500 is performed bythe voltage boost assembly 100 in FIG. 1 or a controller associatedtherewith. While pertinent features are shown, those of ordinary skillin the art will appreciate from the present disclosure that variousother features have not been illustrated for the sake of brevity and soas not to obscure more pertinent aspects of the example implementationsdisclosed herein. To that end, briefly, in some circumstances, themethod 500 includes: powering on a voltage boost assembly; determiningwhether quick-start conditions are satisfied; operating the voltageboost assembly under regular parameters if the quick-start conditionsare not satisfied; and operating the voltage boost assembly underquick-start parameters if the quick-start conditions are satisfied.

To that end, as represented by block 5-1, the method 500 includespowering on a voltage boost assembly. For example, with reference toFIG. 1, the voltage boost assembly 100 initiates operation when theassociated device (e.g., a mobile phone or the like) is powered on. Forexample, with reference to FIG. 2, the voltage boost assembly 100 ispowered on when the PFET associated with boost control 202 is in an “on”state, which allows current to flow from the inductive element 134 tothe capacitive element 132.

As represented by block 5-2, the method 500 includes determining whetherquick-start enable conditions are satisfied. For example, with referenceto FIG. 1, the sensor assembly 110 senses whether an electricalcondition relative to an electrical output of the boost converter (e.g.,V_(OUT) 106) has breached a first threshold. According to someimplementations, for example, the quick-start enable conditions aresatisfied when V_(IN) 102<V_(REF) 104 and 0.8*V_(REF) 104>V_(OUT) 106.

If the quick-start enable conditions are not satisfied, the methodcontinues to block 5-3. If the quick-start enable conditions aresatisfied, the method continues to block 5-4. For example, withreference to FIG. 1, the sensor assembly 110 generates a quick-startenable signal and provides the quick-start enable signal to thequick-start module 120 in response to sensing that the first thresholdhas been breached. According to some implementations, detecting that anelectrical condition relative to an electrical output of the boostconverter has breached the first threshold includes detecting that areference voltage indicates demand for an output voltage that is atleast 10% higher than the current output voltage. In someimplementations, detecting that an electrical condition relative to anelectrical output of the boost converter has breached the firstthreshold includes detecting that a reference voltage indicates demandfor an output voltage that is at least 20% higher than the currentoutput voltage. In another example, with reference to FIG. 3, whenV_(IN) 102<V_(REF) 104 and 0.8*V_(REF) 104>V_(OUT) 106, the output ofthe AND gate 316 is logic high (e.g., 1) and the voltage boost assembly100 operates under quick-start parameters.

As represented by block 5-3, the method 500 includes operating thevoltage boost assembly under regular parameters.

As represented by block 5-4, the method 500 includes operating thevoltage boost assembly under quick-start parameters. For example, withreference to FIG. 1, the quick-start module 120 is configured to drivethe boost converter at a relatively high duty-cycle and so that theboost converter delivers an output current that satisfies a secondthreshold in order to charge a capacitive element arranged at the outputin response to the quick-start enable signal. According to someimplementations, the second threshold is characterized by a currentlevel available to charge the capacitive element.

According to some implementations, as represented by block 5-4 a, themethod 500 includes enabling the charging circuit. For example, withreference to FIG. 1, the quick-start module 120 includes a chargingcircuit 122 provided to charge the capacitive element 132 so that theoutput of an associated error amplifier satisfies a third threshold inresponse to the quick-start enable signal. According to someimplementations, the third threshold is characterized in relation to ahigh voltage level that can be sustained at the output of the erroramplifier. In some implementations, the charging circuit 122 isconfigured to force the output of the error amplifier 136 to satisfy apredefined value (e.g., 1.1 V or 1.2 V). For example, in someimplementations, this forces the error amplifier 136 to run at a dutycycle that satisfies a predefined threshold (e.g., 100% or maximum dutycycle).

According to some implementations, as represented by block 5-4 b, themethod 500 includes enabling the saturation limiting circuit. Forexample, with reference to FIG. 1, the quick-start module 120 includes asaturation limiting circuit 124 provided to limit current through theinductive element 134 of the boost converter 130 to establish the outputcurrent level in response to the quick-start enable signal. According tosome implementations, the current through the inductive element 134 islimited to a level that is characterized by a saturation condition ofthe inductive element 134. In some implementations, the saturationlimiting circuit 124 is configured to set a limit of the current flowingthrough the inductive element 134 to a predetermined output level (e.g.,2.5 A). For example, in some implementations, this prevents saturationof the inductive element 134.

According to some implementations, as represented by block 5-4 c, themethod 500 includes enabling the ripple control module. For example,with reference to FIG. 1, the quick-start module 120 includes a ripplecontrol module 136 provided to reduce current ripple in the outputcurrent level by adjustment of a switching frequency in response to thequick-start enable signal. According to some implementations, the ripplecontrol module 134 includes an oscillator 128 that provides switchingfrequency that is increased in response to the quick-start enablesignal. In some implementations, ripple control module 126 is configuredto increase the switching frequency of an oscillator 128 above apredetermined switching frequency (e.g., from 2 MHz to 2.5 MHz). Forexample, in some implementations, this reduces ripple in the currentflowing through the inductive element 134.

As represented by block 5-5, the method 500 includes determining whetherquick-start disable conditions are satisfied. For example, withreference to FIG. 1, the sensor assembly 110 is configured to turn offthe quick-start enable signal in response to determining that theelectrical output of the boost converter 130 (e.g., V_(OUT) 106)satisfies a fourth threshold. In some implementations, the fourththreshold is approximately 95% of a set-point output level. According tosome implementations, for example, the quick-start disable conditionsare satisfied when 0.95*V_(REF) 104<V_(OUT) 106 or V_(IN) 102>V_(REF)104. For example, with reference to FIG. 3, when V_(IN) 102>V_(REF) 104or 0.95*V_(REF) 104<V_(OUT) 106, the output of the AND gate 316 is logiclow (e.g., 0) and the voltage boost assembly 100 operates under regularparameters.

If the quick-start disable conditions are not satisfied, the methodcontinues to block 5-4. If the quick-start disable conditions aresatisfied, the method continues to block 5-2.

FIGS. 6A-6C are block diagrams of various integrated circuits (ICs)according to some implementations. While some example features areillustrated, those skilled in the art will appreciate from the presentdisclosure that various other features have not been illustrated for thesake of brevity and so as not to obscure more pertinent aspects of theexample implementations disclosed herein. To that end, for example, FIG.6A shows that in some implementations, some or all portions of thequick-start assembly 115, which operates the voltage boost assembly 100under quick-start parameters when quick-start conditions are satisfied,can be part of a semiconductor die 600. By way of an example, thequick-start assembly 115 can be formed on a substrate 602 of the die600. A plurality of connection pads 604 can also be formed on thesubstrate 602 to facilitate functionalities associated with some or allportions of the quick-start assembly 115.

FIG. 6B shows that in some implementations, a semiconductor die 600having a substrate 602 can include some or all portions of thequick-start assembly 115 and some or all portions of the boost converter130, which operates according to conventional boost convertertechniques. A plurality of connection pads 604 can also be formed on thesubstrate 602 to facilitate functionalities associated with some or allportions of the quick-start assembly 115 and some or all portions of theboost converter 130.

FIG. 6C shows that in some implementations, a semiconductor die 600having a substrate 602 can include some or all portions of thequick-start assembly 115 and some or all portions of the boost converter130, and some or all portions of the power amplifier (PA) 620. Aplurality of connection pads 604 can also be formed on the substrate 602to facilitate functionalities associated with some or all portions ofthe quick-start assembly 115 and some or all portions of the boostconverter 130, and some or all portions of the PA 620.

In some implementations, one or more features described herein can beincluded in a module. FIG. 7 is a schematic diagram of an implementationof a module 700 including the voltage boost assembly 100 in FIG. 1according to some implementations. While some example features areillustrated, those skilled in the art will appreciate from the presentdisclosure that various other features have not been illustrated for thesake of brevity and so as not to obscure more pertinent aspects of theexample implementations disclosed herein. The module 700 includes apackaging substrate 752, connection pads 756, a CMOS (complementarymetal-oxide semiconductor) die 600, a HBT (heterojunction bipolartransistor) die 710, a matching network 720, and one or more surfacemount devices 760. In some implementations, the module 700 is at leastone of a power amplifier module (PAM) or a front-end module (FEM).

The CMOS die 600 includes a substrate 602 including some or all portionsof the bias circuit 200 and some or all portions of the bias circuit610. A plurality of connection pads 604 is formed on the substrate 602to facilitate functionalities associated with some or all portions ofthe quick-start assembly 115 and some or all portions of the boostconverter 130. Similarly, the HBT die 710 includes a substrate 702including some or all portions of the PA 620. The HBT die 710 alsoincludes a plurality of connection pads 704 formed on the substrate 702to facilitate functionalities associated with some or all portions ofthe PA 620.

The connection pads 756 on the packaging substrate 752 facilitateelectrical connections to and from each of the CMOS die 600 and the HBTdie 710. For example, the connection pads 756 facilitate the use ofwirebonds 754 for passing various signals and supply currents and/orvoltages to each of the CMOS die 600 and the HBT die 710.

In some implementations, the components mounted on the packagingsubstrate 752 or formed on or in the packaging substrate 752 can furtherinclude, for example, one or more surface mount devices (SMDs) (e.g.,760) and one or more matching networks (e.g., 720). In someimplementations, the packaging substrate 752 can include a laminatesubstrate.

In some implementations, the module 700 can also include one or morepackaging structures to, for example, provide protection and facilitateeasier handling of the module 700. Such a packaging structure caninclude an overmold formed over the packaging substrate 752 anddimensioned to substantially encapsulate the various circuits andcomponents thereon.

It will be understood that although the module 700 is described in thecontext of wirebond-based electrical connections, one or more featuresof the present disclosure can also be implemented in other packagingconfigurations, including flip-chip configurations.

FIG. 8 schematically depicts an example radio-frequency (RF) device 800having one or more advantageous features described herein. Whilepertinent features are shown, those of ordinary skill in the art willappreciate from the present disclosure that various other features havenot been illustrated for the sake of brevity and so as not to obscuremore pertinent aspects of the example implementations disclosed herein.To that end, in some implementations, the RF device 800 is a wirelessdevice. In some implementations, such a wireless device can include, forexample, a cellular phone, a smart-phone, a hand-held wireless devicewith or without phone functionality, a computer, a laptop, a tabletcomputer, a peripheral device, a router, a repeater, a wireless accesspoint, a base station, or the like.

In some implementations the RF device 800 includes one or more poweramplifier (PAs) (e.g., the PA 620 in FIGS. 6C and 7) in a PA module 812configured to receive their respective RF signals from a transceiver 810that can be configured and operated in known manners to generate RFsignals to be amplified and transmitted, and to process receivedsignals. In some implementations, the PA module 812 can include one ormore filters and/or one or more band/mode selection switches configuredto provide duplexing and/or switching functionalities as describedherein. According to some implementations, the PA module 812 includesthe voltage boost assembly 100 described above with reference to FIGS.1-3. For example, the voltage boost assembly 100 operates underquick-start parameters (e.g., the quick-start module 120 is enabled)when the quick-start enable conditions are satisfied, and the voltageboost assembly 100 operates under regular parameters (e.g., according toconventional boost converter techniques) when the quick-start enableconditions are not satisfied.

The transceiver 810 is shown to interact with a baseband sub-system 808that is configured to provide conversion between data and/or voicesignals suitable for a user and RF signals suitable for the transceiver810. The transceiver 810 is also shown to be connected to a powermanagement component 806 that is configured to manage power for theoperation of the RF device 800. In some implementations, the powermanagement component 806 can also control operations of the basebandsub-system 808 and other components of the RF device 800.

The baseband sub-system 808 is shown to be connected to a user interface802 to facilitate various input and output of voice and/or data providedto and received from the user. The baseband sub-system 808 can also beconnected to a memory 18804 that is configured to store data and/orinstructions to facilitate the operation of the wireless device, and/orto provide storage of information for the user.

In some implementations, a matching network 814 is provided between thePA module 812 and the antenna switch module (ASM) 816. In someimplementations, the ASM 816 is connected to an antenna 820 and isconfigured to control which signals are transmitted via the antenna 820.

As shown in FIG. 8, some received signals via the antenna 820 are shownto be routed from the ASM 816 to one or more low-noise amplifiers (LNAs)824. Amplified signals from the one or more LNAs 824 are shown to berouted to the transceiver 810.

A number of other wireless device configurations can utilize one or morefeatures described herein. For example, the RF device 800 does not needto be a multi-band device. In another example, the RF device 800 caninclude additional antennas such as diversity antenna, and additionalconnectivity features such as Wi-Fi, Bluetooth, and GPS.

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Additionally, the words “herein,” “above,” “below,” and words of similarimport, when used in this application, shall refer to this applicationas a whole and not to any particular portions of this application. Wherethe context permits, words in the above Detailed Description using thesingular or plural number may also include the plural or singular numberrespectively. The word “or” in reference to a list of two or more items,that word covers all of the following interpretations of the word: anyof the items in the list, all of the items in the list, and anycombination of the items in the list.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not necessarily the system described above. The elements andacts of the various embodiments described above can be combined toprovide further embodiments.

While some implementations of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

What is claimed is:
 1. A method of ramping up the output of a boostconverter, the method comprising: sensing that an electrical conditionrelative to an electrical output of the boost converter has satisfied afirst threshold; generating an enable signal; driving a boost converterto deliver an output current that satisfies a second threshold in orderto charge a capacitive element arranged at the output of the boostconverter.
 2. The method of claim 1, wherein generating an enablesignal, includes generating the enable signal in response to sensing thesatisfaction of the first threshold.
 3. The method of claim 1, whereindriving the boost converter includes charging the capacitive element sothat the output of an associated error amplifier satisfies a thirdthreshold.
 4. The method of claim 3 wherein the third threshold ischaracterized in relation to a high voltage level that can be sustainedat the output of the error amplifier.
 5. The method of claim 3 whereindriving the boost converter includes limiting current through theinductive element.
 6. The method of claim 5 wherein limiting currentthrough the inductive element includes limiting current to a levelcharacterized by a saturation condition of the inductive element.
 7. Themethod of claim 1 wherein sensing that an electrical condition relativeto the electrical output of the boost converter has satisfied the firstthreshold includes sensing that a reference voltage indicates demand foran electrical output that is at least 10% higher than the currentelectrical output of the boost converter.
 8. The method of claim 1wherein sensing that an electrical condition relative to an electricaloutput of the boost converter has satisfied the first threshold includessensing that a reference voltage indicates demand for an electricaloutput that is at least 20% higher than the current electrical output ofthe boost converter.
 9. The method of claim 1 wherein driving the boostconverter includes increasing a switching frequency of the boostconverter in response to the quick-start enable signal in order toreduce ripple.
 10. The method of claim 1 wherein the second threshold ischaracterized by a current level available to charge the capacitiveelement.
 11. The method of claim 1 further comprising turning off theenable signal in response to determining that the electrical output ofthe boost converter has satisfied a fourth threshold.
 12. The method ofclaim 11 wherein the fourth threshold is approximately 95% of aset-point output level.
 13. A power amplifier assembly modulecomprising: a packaging substrate configured to receive a plurality ofcomponents; a power amplifier implemented on the substrate; a voltageboost converter implemented on at least a portion of the substrate, thevoltage boost converter including a capacitive element arranged at anoutput, and an inductive element connectable to an electrical supply, asensor assembly configured provide an enable signal and a quick-startmodule responsive to the enable signal, the quick-start moduleconfigured to drive the voltage boost converter to deliver an outputcurrent to charge the capacitive element arranged at the output.
 14. Themodule of claim 13 wherein the module is at least one of a poweramplifier module (PAM) or a front-end module (FEM).
 15. The module ofclaim 13 wherein the sensor assembly is configured to provide an enablesignal in response to detecting that an electrical condition relative toan electrical output of the boost converter has satisfied a firstthreshold.
 16. The module of claim 15 wherein the quick-start module isconfigured to drive the voltage boost converter at a higher duty-cycleso that the voltage boost converter delivers an output current thatsatisfies a second threshold.
 17. The module of claim 13 wherein thequick-start module includes a charging circuit provided to charge thecapacitive element so that an electrical output of an associated erroramplifier satisfies a third threshold in response to the enable signal.18. The module of claim 13 wherein the quick-start module includes asaturation limiting circuit provided to limit current through theinductive element to establish the output current in response to theenable signal.
 19. The module of claim 13 wherein the quick-start moduleincludes a ripple control module provided to reduce current ripple inthe output current level by adjustment of a switching frequency inresponse to the enable signal.
 20. A wireless device comprising: anantenna configured to facilitate transmission of a radio-frequencysignal; and a voltage boost assembly including a boost converter havinga capacitive element arranged at an output, and an inductive elementconnectable to an electrical supply, a sensor assembly provided togenerate a quick-start enable signal in response to detecting that anelectrical condition relative to an electrical output of the boostconverter has breached a first threshold, and a quick-start moduleresponsive to the quick-start enable signal, and configured to drive theboost converter at a relatively high duty-cycle and so that the boostconverter delivers an output current that satisfies a second thresholdin order to charge the capacitive element arranged at the output.